Electronic Data Collection and Storage
Code
11049
Academic unit
Faculdade de Ciências e Tecnologia
Department
Departamento de Ciências dos Materiais
Credits
6.0
Teacher in charge
Joana Maria Doria Vaz Pinto Morais Sarmento
Weekly hours
5
Total hours
5
Teaching language
Português
Objectives
At the end of the semester it is expected that the student achieves a strong knowledge of the different types or architectures and memories (volatile and nonvolatile) currently available, with particular focus in the flash technology. The student is expected to gain competences related to the electrical characterization of memory devices. The course will also focus the emergent memory technologies and the student will gain a deep inside into this area where new research activities will be developed in the Materials Science Department.
Prerequisites
We highly recomend that the students have knowledge on optoelectronic Devices, and the concepts given in:
Fisica I and Eletromagnetismo (FisicaII ou Fisica III),
Microelectronics
Subject matter
- Overview of memory and storage technology: Classification and Requirements
- Memory and Data Storage of Information: processing and storage
- Semiconductor Memory devices: Architectures and components
- CPU, RAM (SRAM, DRAM), ROM (Mask ROM, ROM, EPROM)
- Flash technologies:
- Principles of fabrication and characterization.
- Engineered Optimization (materials, charge trapping layers, architectures)
- Limits
- Ferroelectric random access memory (FRAM)
- Phase change memory (PCM-RAM)
- Resistive random access memory ReRAM
- Conductive Bridge RAM (CBRAM)
- Memristors for non-volatile memory
Bibliography
- D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed., Wiley (2006).
- A.K. Sharma, Advanced Semiconductor Memories: Architectures, Designs and Applications, Wiley -IEEE Press, (2002).
- Hai Li and Yiran Chen, Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing, CRC Press, (2011).
- B. Jacob, S.W. Ng, D.T. Wang, Memory Systems: Cache, DRAM, Disk, Morgan Kaufmann Publishers, Elsevier, (2008).
- M.A. Plonus, Applied Electromagnetics, McGraw-Hill (1986)
Evaluation method
The Final Score is obtained by considering two components, a theoretical and a practical.
The theoretical component will account for 50% of the final score and can be obtained through: i) the realization of three tests along the semester (T1, T2 and T3) or ii) the realization of a final exam at the end of the semester. For approval at the curricular unit, the average of both tests (or the exam) should be higher than 9.5.
The practical component accounts for 50% of the final score and is obtained through the assistance of the practical clqasses - 10%, the realization of group questionaires along the semester during the practical sessions (20%) and through the realization of an individual Practical test performed simultaneously with T3 MT - 20%.
Frequency is obtained with a practical component superior to 9.5